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Part Number
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HM4N10PR |
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Manufacturer
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H&M Semiconductor |
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Description
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N-Channel Enhancement Mode Power MOSFET |
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Published
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Nov 27, 2018 |
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Datasheet
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HM4N10PR
|
Features
● VDS = 100V,ID = 4A RDS(ON) 160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) 170mΩ @ VGS=4.5V (Typ:140mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Applicati...
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