Part Number
|
HM4412 |
Manufacturer
|
H&M Semiconductor |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM4412
N-Channel Enhancement Mode Power MOSFET
Description
The HM4412 uses advanced trench technology to provide excell...
|
Datasheet
|
HM4412
|
Overview
HM4412
N-Channel Enhancement Mode Power MOSFET
Description
The HM4412 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch and PWM applications.
Genera Features
● VDS = 30V,ID = 7.
0A RDS(ON) 31mΩ @ VGS=10V RDS(ON) 43mΩ @ VGS=4.
5V
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
●Load switch ●PWM application
D G
S Schematic diagram
4412
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
4412
HM4412
SOP8
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maxim...
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