Part Number
|
HM4438 |
Manufacturer
|
H&M Semiconductor |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
+0
N-Channel Enhancement Mode Power MOSFET
Description
The +0 uses advanced trench technology and design to pro...
|
Datasheet
|
HM4438
|
Overview
+0
N-Channel Enhancement Mode Power MOSFET
Description
The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS = 60V,ID =9A RDS(ON) 16mΩ @ VGS=10V
(Typ:12mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
Schematic diagram
Application
● Power switching application ● Load switch
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
+0
SOP-8
Reel Size -
Tape width -
Quanti...
Similar Datasheet