Part Number
|
HM4444 |
Manufacturer
|
H&M Semiconductor |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM4444
N-Channel Enhancement Mode Power MOSFET
Description
The HM4444 uses advanced trench technology and design to pro...
|
Datasheet
|
HM4444
|
Overview
HM4444
N-Channel Enhancement Mode Power MOSFET
Description
The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =80V,ID =12.
5A RDS(ON) 16mΩ @ VGS=10V
(Typ:13mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin Assignme...
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