Part Number
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HM4488 |
Manufacturer
|
H&M Semiconductor |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
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N-Channel Enhancement Mode Power MOSFET
Description
The HM4488 uses advanced trench technology and design to...
|
Datasheet
|
HM4488
|
Overview
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N-Channel Enhancement Mode Power MOSFET
Description
The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =150V,ID =5.
2A RDS(ON) 44mΩ @ VGS=10V
(Typ:31mΩ)
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
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Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% ΔVds TESTED!
SOP-8 top view
Package Marking and Ordering Informati...
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