Part Number
|
HM2300DR |
Manufacturer
|
H&M Semiconductor |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM2300DR
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300DR uses advanced trench technology to provide ex...
|
Datasheet
|
HM2300DR
|
Overview
HM2300DR
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a battery protection or in other switching application.
General Features
● VDS = 20V,ID = 8.
0A RDS(ON) 40mΩ @ VGS=2.
5V RDS(ON) 33mΩ @ VGS=4.
5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
●Battery protection ●Load switch ●Power management
D G
S Schematic diagram
DFN2X2-6L bottom view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2300
HM2300 DR
DFN2X2...
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