|
Part Number
|
HM12N02D |
|
Manufacturer
|
H&M Semiconductor |
|
Description
|
N-Channel Enhancement Mode Power MOSFET |
|
Published
|
Nov 27, 2018 |
|
Detailed Description
|
DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS
HM12N02D N-Channel MOSFET
V(BR)DSS
20V
RDS(on)MAX
11mΩ@ 4.5V
13mΩ@ 2....
|
|
Datasheet
|
HM12N02D
|
Overview
DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS
HM12N02D N-Channel MOSFET
V(BR)DSS
20V
RDS(on)MAX
11mΩ@ 4.
5V
13mΩ@ 2.
5V 16 mΩ@1.
8V 22mΩ@1.
5V 41mΩ@1.
2V
ID
12A
DFNWB2×2-6L-J
FEATURES TrenchFET Power MOSFET Small package DFNWB2×2-6L-J
MARKING:
APPLICATION Load Switch for Portable Applications
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Para
meter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID Continuous Drain Current (note 1) IDM Collector Current-Pulse(Note3)
RθJA Thermal Resistance from Junction to Ambient (note 2) Tj Junction Temperature
Tstg Storage Temperature TL Lead Temperature for Soldering Purposes(1/8’’ from case for ...
Similar Datasheet