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Part Number
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Si4953 |
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Manufacturer
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Nanxin |
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Description
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Dual P-Channel MOSFET |
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Published
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Nov 28, 2018 |
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Detailed Description
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Features
·Low On resistance. ·-4.5V drive. ·RoHS compliant.
Si4953 Dual P-Channel Enhancement MOSFET
Si4953
Package Dim...
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Datasheet
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Si4953
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Overview
Features
·Low On resistance.
·-4.
5V drive.
·RoHS compliant.
Si4953 Dual P-Channel Enhancement MOSFET
Si4953
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.
8mm) 1unit Mounted on a ceramic board (1000mm2×0.
8mm)
Ratings
-30 +20 -5.
2 -20 1.
3 1.
7 150 -55~+150
Unit
V V A A W W 0C 0C
Electrical Characteristics at Ta=250C
Parameter
Symbol
Drain-to-Source Break...
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