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Part Number
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AFN3400A |
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Manufacturer
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Alfa-MOS |
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Description
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N-Channel MOSFET |
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Published
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Nov 29, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFN3400A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
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Datasheet
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AFN3400A
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Overview
Alfa-MOS
Technology
General Description
AFN3400A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFN3400A
30V N-Channel Enhancement Mode MOSFET
Features
30V/2.
4A,RDS(ON)=54mΩ@VGS=10V 30V/1.
8A,RDS(ON)=58mΩ@VGS=4.
5V 30V/1.
5A,RDS(ON)=65mΩ@VGS=2.
5V 30V/1.
0A,RDS(ON)=180mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) SOT-23 package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin De...
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