Part Number
|
AFN3456S |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel MOSFET |
Published
|
Dec 1, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN3456S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
|
Datasheet
|
AFN3456S
|
Overview
Alfa-MOS
Technology
General Description
AFN3456S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOT-23-6L )
AFN3456S
30V N-Channel Enhancement Mode MOSFET
Features
30V/5.
4A,RDS(ON)=40mΩ@VGS=10V 30V/4.
8A,RDS(ON)=50mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TSOT-23-6L package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3 4 5 6
Symbol D D G S D D
Description ...
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