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Part Number
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AFN6810W |
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Manufacturer
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Alfa-MOS |
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Description
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N-Channel MOSFET |
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Published
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Dec 1, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
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Datasheet
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AFN6810W
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Overview
Alfa-MOS
Technology
General Description
AFN6810W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFN6810W
100V N-Channel Enhancement Mode MOSFET
Features
z 100V/2.
3A,RDS(ON)=310mΩ@VGS=10V 100V/1.
8A,RDS(ON)=320mΩ@VGS=4.
5V
z Super high density cell design for extremely low RDS (ON)
z TSOP-6 package design
Application
z Power Management in Note book z LED Display z DC-DC System z LCD Panel
Pin Define
Pin 1 2 3 4 5 6
Symbol G1 S2 G2 D2 S1...
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