Part Number
|
AFN6802WS |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel MOSFET |
Published
|
Dec 1, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN6802WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
|
Datasheet
|
AFN6802WS
|
Overview
Alfa-MOS
Technology
General Description
AFN6802WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFN6802WS
30V N-Channel Enhancement Mode MOSFET
Features
30V/4.
0A,RDS(ON)=28mΩ@VGS=10V 30V/2.
8A,RDS(ON)=32mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3 4 5 6
Symbol G1 S2 G2 D2 S1 D1
Description ...
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