Part Number
|
AFN3410 |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel MOSFET |
Published
|
Dec 1, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN3410, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
|
Datasheet
|
AFN3410
|
Overview
Alfa-MOS
Technology
General Description
AFN3410, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFN3410
30V N-Channel Enhancement Mode MOSFET
Features
30V/6.
0A,RDS(ON)=27mΩ@VGS=10V 30V/4.
5A,RDS(ON)=30mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3 4 5 6
Symbol D D G S D D
Ordering Information
...
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