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Part Number
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AFP1933 |
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Manufacturer
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Alfa-MOS |
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Description
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P-Channel MOSFET |
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Published
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Dec 1, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
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Datasheet
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AFP1933
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Overview
Alfa-MOS
Technology
General Description
AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-363 )
AFP1933
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-0.
55A, R =DS(ON) 900 mΩ@ VGS =-10V -30V/-0.
35A, R =DS(ON) 1000 mΩ@ VGS =-4.
5V -30V/-0.
15A, R =DS(ON) 1800 mΩ@ VGS =-2.
5V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package desig...
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