PE4425 P-Channel Enhancement Mode Power MOSFET Description The PE4425 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =-40V,ID =-15A RDS(ON) 10mΩ @ VGS=-10V RDS(ON) 15mΩ @ VGS=-4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter Marking and pin assignment SOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain...

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