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Part Number
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PED705 |
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Manufacturer
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semi one |
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Description
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P-Channel Enhancement Mode Power MOSFET |
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Published
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Dec 3, 2018 |
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Detailed Description
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PED705
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PED705 uses advanced trench technology to provide excel...
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|
Datasheet
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PED705
|
Overview
PED705
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PED705 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switching application and a wide variety of other applications
Bottom Drain Contact
D1
6D
D2
5D
GENERAL FEATURES
● VDS = -12V,ID = -8A RDS(ON) 30mΩ @ VGS=-4.
5V RDS(ON) 40mΩ @ VGS=-2.
5V RDS(ON) 60mΩ @ VGS=-1.
8V
G3
4S
Pin 1
Pin Assignment
DD G
●Asvanced trench MOSFET process technology ● Ultra low on-resistance with low gate charge ● New Thermally Enhanced DFN2X2-6L Package
Drain
Source
Application
●PWM applications ●Load switch ●battery ch...
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