PE4435 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V.
GENERAL FEATURES ● VDS = -30V,ID = -9.
1A RDS(ON) 35mΩ @ VGS=-4.
5V RDS(ON) 20mΩ @ VGS=-10V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery Switch ●Load switch ●Power management SOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25℃ Continuous Drain Current (TJ =150℃) TC...

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