PED505 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED505 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
Bottom Drain Contact D1 6D D2 5D GENERAL FEATURES ● VDS = -12V,ID = -5.
0A RDS(ON) 52mΩ @ VGS=-4.
5V RDS(ON) 70mΩ @ VGS=-2.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package G3 4S Pin 1 Pin Assignment DD G Drain Source Application ●PWM applications ●Load switch ●Power management DD S DFN2X2-6L bottom review Absolute Maximum Ratings (TA=25℃unless otherwise no...

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