PED2510L N-Channel Enhancement Mode Power MOSFET Description The PED2510L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =8A RDS(ON) = 14mΩ @ VGS=2.
5V RDS(ON) = 10mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram S1 S2 S1 D1/D2 S2 G1 G2 Marking and pin Assignment Application ● Uni-directional load switch ● Bi-directional load switch DFN2x5-6L top view Absolute Maximum Ratings...

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