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Part Number
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PE2606 |
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Manufacturer
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semi one |
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Description
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Power MOSFET |
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Published
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Dec 3, 2018 |
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Detailed Description
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DESCRIPTION
The PE2606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The comp...
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Datasheet
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PE2606
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Overview
DESCRIPTION
The PE2606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.
The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES
●N-Channel VDS = 20V,ID = 6.
8A RDS(ON) 21mΩ @ VGS=4.
5V RDS(ON) 28mΩ @ VGS=2.
5V
●P-Channel VDS = -20V,ID = -7A RDS(ON) 35mΩ @ VGS=-4.
5V RDS(ON) 45mΩ @ VGS=-2.
5V
●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package
PE2606
N-channel P-channel Schematic diagram
Marking and pin Assignment SOP-8 top view
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
...
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