PE3080K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
GENERAL FEATURES ● VDS =30V,ID =80A RDS(ON) 7.
5mΩ @ VGS=10V RDS(ON) 10mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! TO-252-2L top view A...

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