PE2017 N-Channel Enhancement Mode Power MOSFET Description The PE2017 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protested.
General Features ● VDS = 20V,ID =7A RDS(ON) 24mΩ @ VGS=2.
5V RDS(ON) 17mΩ @ VGS=4.
5V ESD Rating: 2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●PWM application ●Load switch TSSOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source V...

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