Part Number
|
PE15N10 |
Manufacturer
|
semi one |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Dec 3, 2018 |
Detailed Description
|
PE15N10
N-Channel Enhancement Mode Power MOSFET
Description
The PE15N10 uses advanced trench technology and design to p...
|
Datasheet
|
PE15N10
|
Overview
PE15N10
N-Channel Enhancement Mode Power MOSFET
Description
The PE15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =100V,ID =15A RDS(ON) 100mΩ @ VGS=10V (Typ:85mΩ )
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ●
Marking and pin assignment
100% UIS TESTED! 100% ΔVds...
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