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T4M10T600B

Part Number T4M10T600B
Manufacturer LITE-ON
Description Sensitive Gate Triacs Sillicon Bidirectional Thyristors
Published Dec 3, 2018
Detailed Description LITE-ON SEMICONDUCTOR T4M10T-B SERIES Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 4 AMPERES RMS 60...
Datasheet T4M10T600B





Overview
LITE-ON SEMICONDUCTOR T4M10T-B SERIES Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 4 AMPERES RMS 600 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits High Immunity to dv/dt - 50 V/us Minimum at 125℃ Commutating di/dt - 3.
0 A/ms Minimum at 125℃ Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design On-State Current Rating of 4 Amperes RMS at 100℃ High Surge Current Capability - 40 Amperes Blocking Voltage to 800 Volts Rugged, Economical TO220AB Package Operational in Three Quadrants: Q1, Q2, and Q3 Pb-Free Package MECHANICAL DATA Case: Molded plastic Weight: 0.
07 ounces, 2.
0 grams TO-220AB B C L D TO-220...






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