VPDQ20 P-Channel Enhancement-Mode MOSFET .
:rSilicanix ~ incorporated DESIGNED FOR: @ Switching • Amplification FEATURES • High Breakdown 200 V • Low rDSlon) 20 n TYPE Single IPACKAGE DEVIC--E TO-206AC • VP2020E TO-92 • VP2020L BSS92 Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.
010 (0.
254) 0.
0087 (0.
2209) Source Pad 0.
0070 (0.
1778) .
.
.
.
lh1Q.
(0.
254) 7-168 T 0.
038 (0.
965) 1 ~Siliconix ~ incorporated TYPICAL CHARACTERISTICS Output Characteristics -1.
0 V s=-10Y ~/-0.
8 ",-- -0.
6 10 t(A) -0.
4 ,Y-0.
2 i;""" -8 V -7 V 6V -S V -4 V if o o -10 -20 -30 VOS (V) -3 V -40 -so VPDQ20 Ohmic Region Characteristics -sao I I I I- TJ = 25°C -400 J iLGS Lldv y...

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