Alfa-MOS Technology AFN6035S 60V N-Channel Enhancement Mode MOSFET General Description AFN6035S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features  60V/40A,RDS(ON)= 4.
5mΩ@VGS=10V  60V/30A,RDS(ON)= 5.
5mΩ@VGS=6.
0V  60V/20A,RDS(ON)= 7.
2mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS (ON)  TO-220-3L package design Pin Description ( TO-220-3L ) Application  Synchronous Rectifier  Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ord...

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