Part Number
|
AFP3679S |
Manufacturer
|
Alfa-MOS |
Description
|
P-Channel Enhancement Mode MOSFET |
Published
|
Dec 6, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
|
Datasheet
|
AFP3679S
|
Overview
Alfa-MOS
Technology
General Description
AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP3679S
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-20A,RDS(ON)=10mΩ@VGS=-10V -30V/-15A,RDS(ON)=15mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Switch Load Switch in High Current Applications DC/DC Converters
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Informa...
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