Alfa-MOS Technology General Description AFP5039S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L ) AFP5039S 100 P-Channel Enhancement Mode MOSFET Features -100/-12A,RDS(ON)= 90mΩ@VGS= -10V -100/-8A,RDS(ON)= 100mΩ@VGS= -4.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch DC/DC Converters Active Clamp in Intermediate DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Ord...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)