Alfa-MOS Technology General Description AFN2604, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L ) AFN2604 40V N-Channel Enhancement Mode MOSFET Features 40V/20A,RDS(ON)= 22mΩ@VGS=10V 40V/12A,RDS(ON)= 40mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ord...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)