Part Number
|
AFN5008S |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Dec 6, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN5008S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
|
Datasheet
|
AFN5008S
|
Overview
Alfa-MOS
Technology
General Description
AFN5008S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFN5008S
40V N-Channel Enhancement Mode MOSFET
Features
z 40V/20A,RDS(ON)= 8.
5mΩ@VGS=10V z 40V/15A,RDS(ON)= 9.
5mΩ@VGS=4.
5V z Super high density cell design for extremely
low RDS (ON) z TO-252-2L package design
Application
z LCD Display Backlight Inverters z DC/DC Converters
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part O...
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