Alfa-MOS Technology AFN5296S 100V N-Channel Enhancement Mode MOSFET General Description AFN5296S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features z 100V/20A,RDS(ON)=7.
2mΩ@VGS=10V z 100V/15A,RDS(ON)=10.
5mΩ@VGS=4.
5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin Description ( TO-252-2L ) Application z Primary Side Switch z POL Synchronous buck converter z LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G...

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