Part Number
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AFN9498 |
Manufacturer
|
Alfa-MOS |
Description
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N-Channel Enhancement Mode MOSFET |
Published
|
Dec 6, 2018 |
Detailed Description
|
Alfa-MOS
Technology
AFN9498
100V N-Channel Enhancement Mode MOSFET
General Description
AFN9498, N-Channel enhancement ...
|
Datasheet
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AFN9498
|
Overview
Alfa-MOS
Technology
AFN9498
100V N-Channel Enhancement Mode MOSFET
General Description
AFN9498, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
100V/5A,RDS(ON)= 135mΩ@VGS=10V 100V/3A,RDS(ON)= 145mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-252-2L )
Application
LED Backlight for LCD TV High Frequency Boost Converter Telecom Industrial power supplies
Pin Define
Pin 1 2 3
Symbol G S ...
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