Part Number
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AFN8412W |
Manufacturer
|
Alfa-MOS |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Dec 11, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
|
Datasheet
|
AFN8412W
|
Overview
Alfa-MOS
Technology
General Description
AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-223 )
AFN8412W
100V N-Channel Enhancement Mode MOSFET
Features
100V/3.
6A,RDS(ON)=300mΩ@VGS=10V 100V/3.
0A,RDS(ON)=310mΩ@VGS=4.
5V Super high density cell design for extremely
low RDS (ON) SOT-223 package design
Application
Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter...
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