Part Number
|
AFP8989 |
Manufacturer
|
Alfa-MOS |
Description
|
P-Channel Enhancement Mode MOSFET |
Published
|
Dec 11, 2018 |
Detailed Description
|
Alfa-MOS
Technology
General Description
AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
|
Datasheet
|
AFP8989
|
Overview
Alfa-MOS
Technology
General Description
AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-89-3L )
AFP8989
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-3.
6A,RDS(ON)= 115mΩ@VGS= -10V -60V/-2.
6A,RDS(ON)= 125mΩ@VGS= -4.
5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design
Application
Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems.
Backlight Inverter for LCD Display Load Switch CCFL In...
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