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Part Number
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AFP3415 |
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Manufacturer
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Alfa-MOS |
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Description
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P-Channel Enhancement Mode MOSFET |
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Published
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Dec 11, 2018 |
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Detailed Description
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Alfa-MOS
Technology
General Description
AFP3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
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Datasheet
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AFP3415
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Overview
Alfa-MOS
Technology
General Description
AFP3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L )
AFP3415
20V P-Channel Enhancement Mode MOSFET
Features
-20V/-4.
9A,RDS(ON)=43mΩ@VGS=4.
5V -20V/-3.
4A,RDS(ON)=55mΩ@VGS=2.
5V -20V/-2.
2A,RDS(ON)=75mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capa...
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