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vishay.
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SiZF914DT
Vishay Siliconix
Dual N-Channel 25 V (D-S) MOSFET with
Schottky Diode
FEATURES
• TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated
Schottky
• G1 return/S1 pin for enhancing high side driving • 100 % Rg and UIS tested • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
PRODUCT SUMMARY
VDS (V) RDS(on) max.
() at VGS = 10 V RDS(on) max.
() at VGS = 4.
5 V Qg typ.
(nC) ID (A) a Configuration
CHANNEL-1 CHANNEL-2
25 25
0.
00380
0.
00090
0.
00620
0.
00150
6.
6 31
40 60
Dual
APPLICATIONS • CPU core power
N-Channel 1 MOSFET
• Computer / server peripherals GHS/G1
• POL
G1Return/S1
• Synchronous buck...