www.
vishay.
com
SiZF906DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with
Schottky Diode
PRODUCT SUMMARY
Channel-1 Channel-2
VDS (V) 30
30
RDS(on) () (MAX.
) 0.
00380 at VGS = 10 V 0.
00530 at VGS = 4.
5 V 0.
00117 at VGS = 10 V 0.
00158 at VGS = 4.
5 V
ID (A) 60 a 60 a 60 a 60 a
Qg (TYP.
) 11 nC
46 nC
FEATURES
• TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated
Schottky
• 100 % Rg and UIS tested • Material categorization: for definitions of
compliance please see www.
vishay.
com/doc?99912
Ordering Information: SiZF906DT-T1-GE3 (lead (Pb)-free and halogen-free)
APPLICATIONS • CPU core power
N-Channel 1 MOSFET
• Computer / server peripherals GHS/G1
• POL
G1R...