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SSC8037GT8

Part Number SSC8037GT8
Manufacturer AFSEMI
Description P-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8037GT8 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 27mR@-10V 39mR@-4V5 ID -8A  ...
Datasheet SSC8037GT8




Overview
SSC8037GT8 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 27mR@-10V 39mR@-4V5 ID -8A  Applications  Load Switch  DCDC conversion  NB battery  Pin Configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.
5V~25V) such as load switch and battery protection.
 Package Information SSC-1V0 Units:mm http://www.
afsemi.
com 1/4 Analog Future SSC8037GT8  Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parame...






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