Part Number
|
SSC8013GSB |
Manufacturer
|
AFSEMI |
Description
|
P-Channel Enhancement Mode MOSFET |
Published
|
Dec 15, 2018 |
Detailed Description
|
SSC8013GSB
P-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP 38mR@-4V5
ID
Applications
Load Switc...
|
Datasheet
|
SSC8013GSB
|
Overview
SSC8013GSB
P-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP 38mR@-4V5
ID
Applications
Load Switch
Portable Devices DCDC conversion
-12V ±8V 47mR@-2V5 -5A 61mR@-1V8
Pin Configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance.
This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package.
Excellent thermal and
D: Drain; G: Gate; S: Source
electrical capabilities.
Package ...
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