SSC8028GT3 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Computer  Notebook 20V ±16V 11mR@10V 16mR@4V5 12A  Pin configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
 Package Information SSC-V1.
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com h // S i P 1/4 Analog Future SSC8028GT3  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) ID IDM Total Powe...

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