SSC8124GT3 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 22mR@4V5 ID  Applications  Load Switch  Portable Devices  DCDC Conversion 20V ±8V 25mR@2V5 10A 32mR@1V8  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.
This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.
Excellent thermal and electrical capabilities.
 Package Information SSC-V1.
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