Part Number
|
SSC8030GT4 |
Manufacturer
|
AFSEMI |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Dec 15, 2018 |
Detailed Description
|
SSC8030GT4
N-Channel Enhancement Mode MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 8.5mR@10V 10.5mR@4V5
ID 75A
...
|
Datasheet
|
SSC8030GT4
|
Overview
SSC8030GT4
N-Channel Enhancement Mode MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 8.
5mR@10V 10.
5mR@4V5
ID 75A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
PC/NB DCDC conversion
Pin configuration
Top View
S D G
Package Information
Unit: mm TO220
SSC-V1.
0
http://www.
afsemi.
com
1/4
Analog Future
SSC8030GT4
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Tota...
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