SSC8022GS6

SSC8022GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 35mR@4V5 45mR@2V5 ID 3.5A  Applications  Load Switch  Portable Devices  DCDC conversion  Pin configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resis...