SSC8020GS6
N-Channel Enhancement Mode MOSFET
Features
VDS 20V
VGS ±8V
RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8
ID 750mA
General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .
This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications
Replace Digital
Transistor Battery Operated Systems Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Pin configuration
Top View
Package Information
③
①②
SOT23 Unit:mm
SSC-V1.
0
http://www.
afsemi.
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