Part Number
|
SSC8336GS1 |
Manufacturer
|
AFSEMI |
Description
|
Dual N-Channel Enhancement Mode MOSFET |
Published
|
Dec 15, 2018 |
Detailed Description
|
SSC8336GS1
Dual N-Channel Enhancement Mode MOSFET
Features
Applications Inverter;
VDS VGS
RDSon TYP
ID
30V ...
|
Datasheet
|
SSC8336GS1
|
Overview
SSC8336GS1
Dual N-Channel Enhancement Mode MOSFET
Features
Applications Inverter;
VDS VGS
RDSon TYP
ID
30V ±20V
16mR@10V 20mR@4V5
9A
Pin configuration
General Description
Top View
This N-Channel enhancement mode power FETs are produced with high
cell density, DMOS trench technology, which is especially used to
minimize on-state resistance.
This device is suitable for use as a load
switch,power management in PWM controlled DC/DC Converter and
push-pull DC/AC Inverter Systems.
Package Information
Ordering Information
Device SSC8336GS1
Marking SSC
8336GS1
Package SOP8
Qty per Reel 2500
Reel Size 13 Inch
SSC-1V0
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