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Part Number
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SSC8323GN3 |
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Manufacturer
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AFSEMI |
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Description
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Dual P-Channel Enhancement Mode MOSFET |
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Published
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Dec 15, 2018 |
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Detailed Description
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SSC8323GN3
Dual P-Channel Enhancement Mode MOSFET
Features
VDS -20V
VGS ±12V
RDSon TYP 60mR@-4V5 75mR@-2V5 105mR@...
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Datasheet
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SSC8323GN3
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Overview
SSC8323GN3
Dual P-Channel Enhancement Mode MOSFET
Features
VDS -20V
VGS ±12V
RDSon TYP 60mR@-4V5 75mR@-2V5 105mR@-1V8
ID -3.
5A
Applications
Li Battery Charging; High Side DC/DC Converter; Load Switch;
Power Management in Portable, Battery
Powered Devices
Pin configuration
Top View
General Description
SSC8323GN3 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .
This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Package Information
8765 D1 D1 D2 D2
S1 G1 S2 G2 123 4
Package:DFN3x2
Unit:mm
Dim Min Ty...
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