SSC8K23GN2
P-Channel Enhancement Mode MOSFET with
Schottky Diode
Features
P-MOSFET VDS VGS
RDSon TYP 135mR@-4V5
ID
Applications
Bidirectional blocking switch; DC-DC conversion applications; Li-battery charging;
-20V ±8V
Schottky
180mR@-2V5 240mR@-1V8
-2A
Pin configuration
Top View
VR IR
VF
20V 35uA 410mV@0.
5A
General Description
IO 1A
654
KG
S
SSC8K23GN2 combines a P-Channel enhancement mode power MOSFET which is produced with high
KD
cell density and DMOS trench technology and a low
forward voltage
schottky diode.
the tiny and thin
outline saves PCB consumption.
A NC D 123
Package Information
ackage:DFN2x2
Unit:mm
Dim Min Typ Max
A 1.
95 2 2.
08
B 1...