Power
Transistors
2SC5406, 2SC5406A
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VCEO VEBO ICP IC IB
PC
1500 1500 600
5 20 14 8 100 3
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V V A A A
W
˚C ˚C
3.
3±0...