*RoHS COMPLIANT TISP4C115H3BJ THRU TISP4C350H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge - Low Off-State Capacitance Device Name TISP4C115H3BJ † TISP4C125H3BJ † TISP4C145H3BJ † TISP4C165H3BJ TISP4C180H3BJ † TISP4C220H3BJ † TISP4C250H3BJ † TISP4C290H3BJ † TISP4C350H3BJ † VDRM V 90 100 120 135 145 180 190 220 275 V(BO) V 115 125 145 165 180 220 250 290 350 SMB Package (Top View) R1 Device Symbol 2T MD-SMB-004-a T Rated for International Surge Wave Shapes Wave Shape 2/10 10/160 10/700 10/560 10/1000 Standard GR-1089-CORE TI...

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