Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Architecture – One 16K Byte Boot Block with Programming Lockout – Two 8K Byte Parameter Blocks – Two Main Memory Blocks (96K, 128K Bytes) • Fast Erase Cycle Time - 10 seconds • Byte-by-byte Programming - 10 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 50 mA Active Current – 100 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49F002(N)(T) is a 5-volt only in-system reprogrammable Flash memory.
Its 2 megabits of memory is organized as 262,144 words by 8 bits.
Ma...

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